期刊：
Journal of Materials Science: Materials in Electronics,2024年35(16):1-9 ISSN：0957-4522
通讯作者：
Wang, HO;Tan, WS
作者机构：
[Lu, Gefei; Su, Kunpeng; Wang, Haiou; Wang, Haochen; Yang, Lin; Huang, Shuai] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key L, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Key Lab Soft Chem & Funct Mat, Minist Educ, Dept Appl Phys, Nanjing 210094, Peoples R China.
通讯机构：
[Wang, HO ; Tan, WS ] H;Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key L, Yiyang 413002, Peoples R China.;Nanjing Univ Sci & Technol, Key Lab Soft Chem & Funct Mat, Minist Educ, Dept Appl Phys, Nanjing 210094, Peoples R China.
摘要：
Magnetoresistance and temperature coefficient of resistance (TCR) of manganites with ferromagnetism have been reported extensively, but the magnetoresistance and TCR of antiferromagnetic manganites are scarce. The transport properties, TCR, and magnetoresistance effect of antiferromagnetic NdMnO3 have been studied in this work. NdMnO3 samples exhibit semiconductor conductivity, and with the different applied magnetic fields, they still maintain semiconductor characteristics and have considerable stability. Under an applied magnetic field of 6 T, a small negative magnetoresistance of 8% appears near 150 K. Moreover, the conduction mechanism and TCR of NdMnO3 are studied. Three models, thermal activation (TA) model, small polaron (SP) model, and variable range jump (VRH) model, are used to analyze the electrical transport of NdMnO3 samples. The results show that the transport behavior of NdMnO3 samples is more consistent with the TA model. The maximum TCR is 9.4% K-1 within the low temperature region (above liquid nitrogen temperature). The TCR decreases with increasing temperature and it remains 2.5% K-1 near room temperature. Antiferromagnetic NdMnO3 has good TCR performance, which can be applied to temperature sensing field and has good application prospect in antiferromagnetic insulating electronic devices.
期刊：
Journal of Applied Physics,2024年136(9):093902 ISSN：0021-8979
通讯作者：
Wang, HO
作者机构：
[Wang, Haiou; Dong, Fuxiao; Wang, Haochen; Zhao, Bojun; Wang, Yan] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key L, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Minist Educ, Nanjing 210094, Peoples R China.
通讯机构：
[Wang, HO ] H;Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.
摘要：
Magnetic characteristics, magnetocaloric effect, and critical behavior of Nd1-xSrxMnO3 compounds by Sr doping (x = 0.2, 0.3, 0.4, 0.5) were studied. All samples maintained orthorhombic structures, but the space group changed from Pnma (No. 62) for x = 0.2, 0.3 to Imma (No. 74) for x = 0.4, 0.5. As Sr doping increased, the Curie temperature (T-C), Curie-Weiss temperature (T-CW), and magnetization increased, attributed to the double exchange (DE) interaction. A discrepancy between T-CW and T-C was observed due to the competition between polarons and DE interaction. The critical behavior was investigated systematically using the self-consistent (modified Arrott plots, MAP) method and the Kouvel-Fisher (KF) relation. The KF relation was suitable for the samples with x = 0.2 and 0.5, while the MAP method was suitable for the samples with x = 0.3 and 0.4. Among the Ising, XY, Heisenberg, and mean-field models, the samples with x = 0.2, 0.3, and 0.4 aligned more closely with the mean-field model, except for the x = 0.5 sample. Entropy change (-Delta S-M) of Nd1-xSrxMnO3 (0.2 <= x <= 0.5) increased with the applied field, with the maximum value observed around T-C. For the sample with x = 0.3, (-Delta S-M) reached 4.315 J/kg K at mu(0)Delta H = 50 kOe, corresponding to a relative cooling power (RCP) of 280.48 J/kg. Remarkably, the x = 0.4 sample displayed (-Delta S-M) of 3.298 J/kg K at mu(0)Delta H = 50 kOe near room temperature, with the RCP of 283.64 J/kg. These findings underscore the role of Sr doping in tuning the magnetic properties, critical behavior, and magnetocaloric effect of NdMnO3.
作者机构：
[Hu, Xiaojie; Dong, Fuxiao; Wang, Haiou; Zhao, Bojun; Huo, Dexuan; Wang, Yan] Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key L, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Minist Educ, Nanjing 210094, Peoples R China.
通讯机构：
[Weishi Tan; Haiou Wang] A;Authors to whom correspondence should be addressed.<&wdkj&>All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, College of Information and Electronic Engineering, Hunan City University, Yiyang 413002, China<&wdkj&>Key Laboratory of Soft Chemistry and Functional Materials, Ministry of Education, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China<&wdkj&>Authors to whom correspondence should be addressed.<&wdkj&>Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, China
作者机构：
[Wang, Xingyu; Tan, Weishi] Nanjing Univ Sci & Technol, Sch Sci, Nanjing 210094, Peoples R China.;[Ma, Chunlin] Huaiyin Normal Univ, Sch Phys & Elect Elect Engn, Huaian 223001, Peoples R China.;[Zhou, Weiping] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key L, Yiyang 413002, Peoples R China.
通讯机构：
[Weishi Tan] A;All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, College of Information and Electronic Engineering, Hunan City University, Yiyang 413002, China<&wdkj&>School of Science, Nanjing University of Science and Technology, Nanjing 210094, China<&wdkj&>Author to whom correspondence should be addressed.
关键词：
C-implanted and P-implanted MgO;defect-induced ferromagnetism;defect types;microstructure;spintronic
作者机构：
[Wang, Xingyu; Tan, Weishi] Nanjing Univ Sci & Technol, Sch Sci, Nanjing 210094, Peoples R China.;[Ma, Chunlin] Huaiyin Normal Univ, Sch Phys & Elect Elect Engn, Huaian 223001, Peoples R China.;[Zhou, Weiping] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.
通讯机构：
[Weishi Tan] A;All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, College of Information and Electronic Engineering, Hunan City University, Yiyang 413002, China<&wdkj&>School of Science, Nanjing University of Science and Technology, Nanjing 210094, China<&wdkj&>Author to whom correspondence should be addressed.
关键词：
Crystal orientation;Ferromagnetism;Saturation magnetization;Single crystals;X ray diffraction analysis;X ray photoelectron spectroscopy;Crystalline orientations;Defect-induced ferromagnetism;Defects induced;Implanted samples;Interstitial defects;Magnetization loops;MgO single crystals;N-implanted MgO;Orientation dependent;Temperature hysteresis;Magnesia
期刊：
Journal of Applied Physics,2022年131(4):043901 ISSN：0021-8979
通讯作者：
Wang, HO
作者机构：
[Zhang, Hui; Wang, Haiou; Wang, HO; Huo, Dexuan; Wang, Yan] Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Minist Educ, Nanjing 210094, Peoples R China.
通讯机构：
[Wang, HO ] H;Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.
摘要：
The evolution of the Griffiths phase (GP) with a ferromagnetic metal (FMM) cluster above the Curie temperature (T-C) and its effect on the magnetic properties, electrical transport, magnetoresistance (MR), and magnetocaloric effect (MCE) is studied comprehensively, using bulk compounds of La1-xBaxMnO3 (0.15 <= x <= 0.25) with different lattice distortions but with the same structural symmetry and space group. These La1-xBaxMnO3 samples show ferromagnetic transition at T-C increasing from 229 K for x = 0.15-300 K for x = 0.25, in addition to the presence of GP with FMM clusters in the paramagnetic (PM) region, which have been confirmed by the combination of magnetization (susceptibility) measurements, the GP theory, and electron paramagnetic resonance technology. With increasing the Ba2+ ion doping, GP temperature (T-G) and T-C of La1-xBaxMnO3 are increased, and the GP regime is strengthened. The GP ratio in the PM region reached 27.7% for the sample with x = 0.20. The resistivity decreases and the FMM phase increases with increasing x from 0.15 to 0.25, which can be explained by the decrease in the bandgap (E-g) and the enhancement of the double-exchange effect. Remarkably, large room-temperature MR (similar to 44.7%) can be observed in the sample with x = 0.25 under 60 kOe, which is related to the presence of the GP regime. Furthermore, the MCE is also affected by the GP regime, and it is deduced that the magnetic transition is of second order. The value of magnetic entropy change (|Delta S-M|) reaches 3.04 J/kg K near room temperature for the sample with x = 0.25 under 50 kOe. This value is associated with a relative cooling power (RCP) of 248.1 J/kg. For the sample with x = 0.15, the value of RCP reaches 307.6 J/kg under 50 kOe. The discovery of the MR and MCE near room temperature is of great significance from the practical application of perovskite manganites in magnetic sensors and magnetic refrigerants.
期刊：
Journal of Materials Science: Materials in Electronics,2022年33(30):23834-23840 ISSN：0957-4522
通讯作者：
Haiou Wang<&wdkj&>Dexuan Huo
作者机构：
[Su, Kunpeng; Hu, Xiaojie; Wang, Haiou; Yang, Dexin; Huang, Shuai; Huo, Dexuan; Wang, Yan] Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.;[Liu, Hao] Huaiyin Inst Technol, Fac Appl Technol, Huaian 223003, Peoples R China.;[Liu, Hao; Wang, Haiou; Tan, Weishi] Nanjing Univ Sci & Technol, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Minist Educ, Nanjing 210094, Peoples R China.
通讯机构：
[Haiou Wang; Dexuan Huo] K;Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou, China<&wdkj&>Key Laboratory of Soft Chemistry and Functional Materials, Ministry of Education, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, China<&wdkj&>Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou, China
关键词：
Manganese compounds;Metal insulator transition;Praseodymium compounds;Pulsed laser deposition;Strontium titanates;Substrates;Temperature distribution;Titanium compounds;Transport properties;X ray diffraction analysis;Applied magnetic fields;Atomic-force-microscopy;High resolution xray diffraction (XRD);Magnetoresistance effects;Out-of-plane;Polycrystalline pr;Pulsed-laser deposition;Single orientations;SrTiO 3;X ray diffraction patterns;Magnetoresistance
作者机构：
[张光富; 谭伟石; 张赛文; 文兵] School of Information and Electronic Engineering, Hunan City University, Yiyang;413000, China;All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, Yiyang;[张光富; 谭伟石; 张赛文] 413000, China<&wdkj&>All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, Yiyang;[张光富; 谭伟石; 张赛文; 文兵] 413000, China
摘要：
An electric pulse-controlled thermal spin injector is theoretically proposed, which consists of a junction with a single-molecule magnet sandwiched between the ferromagnetic and nonmagnetic leads. By applying a temperature gradient and a time-varying bias pulses across the junction, the spin direction of the single-molecule magnet can be controlled to be antiparallel or parallel to the magnetization of the ferromagnetic lead by a spin-transfer torque effect, and the spin polarization of thermoelectric current tunneling through this junction can be switched from +100% to −100% corresponding to a molecule’s spin orientation, respectively. Our numerical results show that the spin polarization of the thermoelectric current will not be easily affected by the magnetization of electrodes, which can be fully and precisely tuned in electric manner. This device scheme can be compatible with current technologies and has potential applications in future spin caloritronics devices.
作者机构：
[Su, Kunpeng; Zhang, Hui; Wang, Haiou; Yang, Dexin; Huang, Shuai; Huo, Dexuan; Wang, Yan] Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Ni, Shenya] Zhejiang Univ, Interdisciplinary Lab Mech, Hangzhou 310013, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Minist Educ, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Nanjing 210094, Peoples R China.
通讯机构：
[Haiou Wang; Dexuan Huo] K;Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou, China<&wdkj&>Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou, China
期刊：
Journal of Applied Physics,2022年132(18):183907 ISSN：0021-8979
通讯作者：
Haiou Wang
作者机构：
[Wang, Haiou; Huo, Dexuan; Wang, Yan] Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key L, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Minist Educ, Nanjing 210094, Peoples R China.
通讯机构：
[Haiou Wang] K;Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University , Hangzhou 310018, China
作者机构：
[张赛文; 邓亚琦; 王冲; 冷潇泠; 张光富; 文兵; 邓杨保; 谭伟石; 田野; 李稳国] School of Information and Electronics Engineering, Hunan City University, Yiyang;413000, China;All-solid-state Energy Storage Materials and Devices Key Laboratory of Hunan Province, Hunan City University, Yiyang;[张赛文; 邓亚琦; 王冲; 冷潇泠; 张光富; 文兵; 邓杨保; 谭伟石; 田野; 李稳国] 413000, China<&wdkj&>All-solid-state Energy Storage Materials and Devices Key Laboratory of Hunan Province, Hunan City University, Yiyang;[张赛文; 邓亚琦; 王冲; 冷潇泠; 张光富; 文兵; 邓杨保; 谭伟石; 田野; 李稳国] 413000, China
通讯机构：
[Deng, Y.] S;[Deng, Y.] A;All-solid-state Energy Storage Materials and Devices Key Laboratory of Hunan Province, China;School of Information and Electronics Engineering, China
关键词：
单分子定位显微;多测量矢量;压缩感知;超分辨成像;稀疏贝叶斯学习
摘要：
在超分辨荧光显微成像技术中，单分子定位显微方法是被广泛应用的技术之一。根据荧光显微成像原理构造多测量矢量压缩感知模型（Multiple Measurement Vector-Compressed Sensing, MMV-CS），并采用多重稀疏贝叶斯学习算法进行求解，来实现超分辨荧光图像重建。分析了有效像元大小、荧光分子生成的光子数和背景信号泊松化噪声对重建结果的影响，以及在图像进行分块处理时算法运行时间的分析。模拟和实验计算分析表明，当点扩展函数的标准差在160 nm时，有效像元大小在120、160、200 nm能取得较好的重构效果，而在60 nm时效果较差。探测器收集的光子数越多，重构效果越好，随着背景信号光子数增加时，离得越近的样品结构越不能分辨。在同样的分块处理情况下，MMV-CS比同伦算法(L1-Homotopy, L1-H）和凸优化算法(CVX)分别快一个数量级和三个数量级，因此，在研究三维超分辨荧光显微成像时，MMV-CS算法在运行时间上具有更大的优势。 In the super-resolution microscopy imaging technology, single molecule localization microscopy is one of the widely used techniques. In this paper, in order to achieve super-resolution fluorescence image reconstruction, a multiple measurement vector Compressed sensing (MMV-CS) model was established based on the principle of fluorescence microscopic imaging, and the multiple sparse Bayesian learning algorithm was applied in problem solving. The effects of the effective pixel size, the number of photons generated by fluorescent molecules and the Poisson noise of fluorescence and background signal on the reconstruction results were analyzed. The running time of the algorithm was analyzed with the image subdivided into smaller patches. The results of simulation and experimental calculation show that when the standard deviation of the point spread function is 160 nm, the effective pixel size at 120 nm, 160 nm and 200 nm can achieve good reconstruction effect, while the pixel size at 60 nm results in poor effect. Better reconstruction image quality is achieved with more photons collected by the detector. As the background signal photons increase, the sample structure becomes indistinguishable when the distance is too close. Under the same subdivided condition, MMV-CS is one order of magnitude faster than the Homotopy (L1-H) algorithm and three orders of magnitude faster than the convex optimization algorithm (CVX), which has greater advantages in terms of running time for the application of MMV-CS in 3D super-resolution fluorescence microscopy.
期刊：
Journal of Luminescence,2021年240:118419 ISSN：0022-2313
通讯作者：
Weiping Zhou<&wdkj&>Chunlin Ma
作者机构：
[Zhou, Weiping] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China.;[Zhai, Zhangyin; Ma, Chenyu; Ma, Chunlin] Huaiyin Normal Univ, Sch Phys & Elect Elect Engn, Huaian 223001, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.
通讯机构：
[Weiping Zhou; Chunlin Ma] S;School of Materials Science and Engineering, Nanchang University, Nanchang, 330031, People's Republic of China<&wdkj&>School of Physics and Electronic Electrical Engineering, Huaiyin Normal University, Huaian, 223001, People's Republic of China
关键词：
Emission spectroscopy;Ferroelectricity;High temperature applications;Phase structure;Piezoelectric ceramics;Solid state reactions;Temperature sensors;Titanium oxides;0.92(na0.5bi0.5)TiO3–0.08 (ba0.90ca0.10)(ti0.92sn0.08)O3: sm3+;Lead-free ferroelectric ceramics;Lead-free piezoelectric ceramic;Non-contact;Optical temperature sensing;Optical thermometry;Photoluminescence properties;Photoluminescence temperature;Solid state reaction method;Temperature dependent;Photoluminescence
期刊：
Materials Research Express,2021年8(6):066102 ISSN：2053-1591
作者机构：
[Wang, Xingyu; Wang, Xiaoxiong; Zhou, Weiping; Tan, Weishi] Nanjing Univ Sci & Technol, Sch Sci, Nanjing 210094, Peoples R China.;[Ma, Chunlin] Huaiyin Normal Univ, Sch Phys & Elect Elect Engn, Huaian 223001, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, Yiyang 413002, Peoples R China.;Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China.
关键词：
Binary alloys;Defects;Ferromagnetism;Magnesia;Magnesium metallography;Magnetic properties;Oxide minerals;Saturation magnetization;Semiconductor quantum wells;Vanadium alloys;Vanadium metallography;X ray diffraction analysis;X ray photoelectron spectroscopy;Composite defects;First principle calculations;High resolution X ray diffraction;Implanted samples;Intrinsic defects;MgO single crystals;Room temperature ferromagnetism;Synergistic effect;Nitrogen compounds
摘要：
<jats:title>Abstract</jats:title>
<jats:p>N-implanted MgO single crystals were prepared and their magnetic properties were studied. High Resolution x-ray diffraction, photoluminescence, and x-ray photoelectron spectroscopy measurements confirmed that both intrinsic defects (Mg vacancies, oxygen vacancies) and extrinsic defects (N-related defects) were presented in the implanted samples. Ferromagnetism was detected in the samples. The saturation magnetization (<jats:italic>Ms</jats:italic>) of the samples increases with the concentrations of Mg vacancies and N-related defects. We conclude that the enhanced <jats:italic>M</jats:italic>s should be ascribed to the synergistic effects of intrinsic and extrinsic defects. The magnetic properties of various composite defects were also studied by first principle calculations. The results suggest that the ferromagnetism is mainly originated from the configurations of V<jats:sub>Mg</jats:sub> (Mg vacancy)+N<jats:sub>O</jats:sub> (N substituting for O).</jats:p>
作者机构：
[Wang, Haiou; Zhang, Hui; Huo, Dexuan; Wang, Yan] Hangzhou Dianzi Univ, Inst Mat Phys, Key Lab Novel Mat Sensor Zhejiang Prov, Hangzhou 310018, Peoples R China.;[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.;[Tan, Weishi] Nanjing Univ Sci & Technol, Dept Appl Phys, Key Lab Soft Chem & Funct Mat, Minist Educ, Nanjing 210094, Peoples R China.
通讯机构：
[Haiou Wang] K;[Weishi Tan] A;Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Institute of Material Physics, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China<&wdkj&>All-solid-state Energy Storage Materials and Devices Key Laboratory of Hunan Province, College of Information and Electronic Engineering, Hunan City University, Yiyang 413002, People's Republic of China<&wdkj&>Key Laboratory of Soft Chemistry and Functional Materials, Ministry of Education, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
期刊：
Journal of Materials Science: Materials in Electronics,2021年32(1):745-751 ISSN：0957-4522
通讯作者：
Zhang, Zhengzhong;Tan, Weishi
作者机构：
[Liu, Hao; Zhang, Zhengzhong] Huaiyin Inst Technol, Fac Appl Technol, Huaian 223003, Peoples R China.;[Wang, Ya] Shanghai Urban Construct Vocat Coll, Shanghai 201415, Peoples R China.;[Dong, Liming] Changshu Inst Technol, Sch Automat Engn, Changshu 215500, Jiangsu, Peoples R China.;[Wang, Haiou] Hangzhou Dianzi Univ, Inst Mat Phys, Hangzhou 310018, Peoples R China.;[Zhang, Yun] Nanjing Univ Sci & Technol, Dept Appl Phys, Nanjing 210094, Peoples R China.
通讯机构：
[Zhang, Zhengzhong; Tan, Weishi] H;Huaiyin Inst Technol, Fac Appl Technol, Huaian 223003, Peoples R China.;Hunan City Univ, All Solid State Energy Storage Mat & Devices Key, Coll Commun & Elect Engn, Yiyang 413002, Peoples R China.
