期刊论文

中文

热加工工艺

1001-3814

2017

46

22

149-151,154

10.14158/j.cnki.1001-3814.2017.22.036

国家自然科学基金资助项目（11079022）；

本校为其他机构

采用射频磁控溅射技术在SrTiO_3(100)衬底上制备Fe_(81)Ga_(19)薄膜。利用XRD、AFM和VSM表征了Fe_(81)Ga_(19)薄膜的生长取向、内应力、表面形貌和磁性,研究了不同溅射功率(60~100 W)对Fe_(81)Ga_(19)薄膜结构和磁性能的影响。结果表明,所有薄膜主要以A_2相和L_(12)相存在。随着溅射功率的增大,A_2相衍射峰的强度缓慢降低,内应力显著增加,表面粗糙度降低,薄膜的剩余磁化强度和饱和磁化强度明显减小,而矫顽力保持不变,都为50 Oe。

Fe_(81)Ga_(19) thin films were deposited on SrTiO_3 (100) substrate by RF magnetron sputtering technique. In order to investigate the effects of sputtering power (60-100 W) on the structure and magnetic properties of Fe_(81)Ga_(19) thin films, the growth orientation, internal stress, surface morphology and magnetic properties of Fe_(81)Ga_(19) films were characterized by X-ray diffraction (XRD), atomic force microscopy(AFM) and vibrating sample magnetometer (VSM). The results show that A_2 and L_(12) phases are main phases in all of these films.With the increase of sputtering power, the intens...