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Temperature bias-driven diode effect in a semiconductor quantum dot

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成果类型:
期刊论文
作者:
Zhang, Zhengzhong;Liu, Hao;Wang, Chao;Zhang, Qingyun;Tan, Weishi
通讯作者:
Hao Liu
作者机构:
[Liu, Hao; Zhang, Zhengzhong; Wang, Chao] Huaiyin Inst Technol, Fac Math & Phys, Huaian 223003, Peoples R China.
[Zhang, Qingyun] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China.
[Tan, Weishi] Hunan City Univ, Coll Commun & Elect Engn, Yiyang 413002, Peoples R China.
通讯机构:
[Hao Liu] F
Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China
语种:
英文
关键词:
Quantum dot;Spin-dependent Seebeck effect;Charge-Seebeck effect
期刊:
Physics Letters A
ISSN:
0375-9601
年:
2021
卷:
399
页码:
127297
基金类别:
National Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11404322, U1832143]; Natural Science Foundation of the Jiangsu Higher Education Institutions of ChinaNational Natural Science Foundation of China (NSFC) [18KJD140005]
机构署名:
本校为其他机构
院系归属:
信息与电子工程学院
摘要:
A spin-dependent Seebeck diode is theoretically proposed, which consists of the junction with a semiconductor quantum dot sandwiched between the ferromagnetic and nonmagnetic leads. It is shown that both thermoelectric and thermal-spin currents driven by temperature bias exhibit asymmetric I-C(S)- Delta T characteristics. In the Coulomb blockade regime, anomalous suppression of the thermoelectric (thermal-spin) current is observed at the forward thermal bias direction (Delta T > 0). This asymmetry in the current profile suggests a diode-like behavior with respect to temperature bias. More inte...

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