The thermal stability of porous silicon （PS） fabricated by pulsed anodic etching method is investi gated by using micro-Raman spectra with different incident laser powers. The ratio of Stokes and Anti-Stokes scattering intensities are used to determine temperature of the sample. The Raman spectra of PS in different temperatures are compared. The trend of spectra is observed. The curve indicating relations between laser power and sample temperature reveals three processes. It is consistent with the curve of Raman shift and Raman intensity. All the phenomena are e...
