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Effect of substrates on lasing properties of GaN transferable membranes

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成果类型:
期刊论文
作者:
Qin, Feifei;Zhu, Qiuxiang*;Zhang, Yanfang;Wang, Ru;Wang, Xiaoxuan;...
通讯作者:
Zhu, Qiuxiang
作者机构:
[Yang, Ying; Qin, Feifei; Zhou, Mengyao] Nanjing Univ Posts & Telecommun, Coll Telecommun & Informat Engn, Peter Grunberg Res Ctr, Nanjing 210003, Peoples R China.
[Zhu, Qiuxiang] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413000, Peoples R China.
[Wang, Xiaoxuan; Wang, Ru] Southeast Univ, State Key Lab Bioelect, Nanjing 210096, Peoples R China.
[Zhang, Yanfang] Wuxi Inst Technol, Wuxi, Jiangsu, Peoples R China.
通讯机构:
[Zhu, Qiuxiang] H
Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413000, Peoples R China.
语种:
英文
关键词:
GaN membrane;F-P mode;Interface;Au film
期刊:
Optical Materials
ISSN:
0925-3467
年:
2021
卷:
122
页码:
111663
机构署名:
本校为通讯机构
院系归属:
信息与电子工程学院
摘要:
Transferable membranes were separated from the GaN epitaxial sheet with lift-off (LLO) technology. After the LLO process, the GaN membrane was removed onto various substrates, and then we can create different interfacial conditions, such as GaN attached with Si and GaN attached to Au. The substrate dependent photoluminescence (PL) properties of GaN membranes are studied by PL and time-resolution photoluminescence (TRPL) measurements in situ. Lasing oscillations are observed in the GaN membranes. The lasing features - which include the lasing spectra, Q factor, laser threshold, mode number, car...

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