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Crystalline Orientation-Dependent Ferromagnetism in N+-Implanted MgO Single Crystal

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成果类型:
期刊论文
作者:
Wang, Xingyu;Ma, Chunlin;Zhou, Weiping;Tan, Weishi
通讯作者:
Weishi Tan
作者机构:
[Wang, Xingyu; Tan, Weishi] Nanjing Univ Sci & Technol, Sch Sci, Nanjing 210094, Peoples R China.
[Ma, Chunlin] Huaiyin Normal Univ, Sch Phys & Elect Elect Engn, Huaian 223001, Peoples R China.
[Zhou, Weiping] Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China.
[Tan, Weishi] Hunan City Univ, Coll Informat & Elect Engn, All Solid State Energy Storage Mat & Devices Key, Yiyang 413002, Peoples R China.
通讯机构:
[Weishi Tan] A
All-Solid-State Energy Storage Materials and Devices Key Laboratory of Hunan Province, College of Information and Electronic Engineering, Hunan City University, Yiyang 413002, China<&wdkj&>School of Science, Nanjing University of Science and Technology, Nanjing 210094, China<&wdkj&>Author to whom correspondence should be addressed.
语种:
英文
关键词:
N-implanted MgO;orientation-dependent;defect-induced ferromagnetism;microstructure;spintronic
期刊:
Materials
ISSN:
1996-1944
年:
2022
卷:
15
期:
20
页码:
7274-
基金类别:
This work is supported by National Natural Science Foundation of China (Project No.: U1332106, U1832143). We would like to thank colleagues from Beijing Synchrotron Radiation Facility (BSRF) for their help.
机构署名:
本校为其他机构
院系归属:
信息与电子工程学院
摘要:
Samples of (110), (100), and (111) MgO single crystals were implanted with 70 keV N ions at room temperature. All as-implanted samples showed room temperature hysteresis in magnetization loops. The observed saturation magnetization (Ms) was 0.79 × 10(-4) emu/g, 1.28 × 10(-4) emu/g, and 1.5 × 10(-4) emu/g for (110), (100) and (111) orientation implanted-MgO and follows the relation Ms(111) &gt; Ms(100) &gt; Ms(110), indicative of crystalline orientation-dependent ferromagnetism in N-implanted MgO. The samples were characterized by X-ray photo...

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