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Coexistence and competition of surface diffusion and geometric shielding in the growth of 1D bismuth nanostructures and their ohmic contact

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成果类型:
期刊论文
作者:
Tian, Ye*;Jiang, Lianjun;Zhang, Xuejun;Deng, Yangbao;Deng, Shuguang
通讯作者:
Tian, Ye
作者机构:
[Tian, Ye; Zhang, Xuejun; Deng, Yangbao; Jiang, Lianjun; Deng, Shuguang] Hunan City Univ, Collage Commun & Elect Engn, Yiyang 413000, Peoples R China.
[Tian, Ye] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China.
通讯机构:
[Tian, Ye] H
Hunan City Univ, Collage Commun & Elect Engn, Yiyang 413000, Peoples R China.
语种:
英文
关键词:
1D nanostructure;Bismuth;Physical vapor deposition
期刊:
Materials Research Express
ISSN:
2053-1591
年:
2014
卷:
1
期:
3
页码:
035034-
基金类别:
college of communication and electronics engineering of Hunan City University
机构署名:
本校为第一且通讯机构
院系归属:
信息与电子工程学院
摘要:
We study the physical-vapor-deposition of 1D bismuth nanostructures. Bi nanowire elongating along [012] and/or [110] direction as well as anisotropic Bi nano-columns are physical-vapor-deposited successfully. The coexistence and competition of surface diffusion and geometric shielding are critical to their formation as well as growth mode transition among them. Since physical-vapor-deposition is a vacuum process, we make use of it to fabricate the ohmic contact to prevent the damage to the bismuth nanostructure...

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