O-doped Bi2S3 is a promising candidate for interfacial resistive switching. Here we introduce the oxygen into chemical-bath-deposited Bi2S3 thin film by annealing in air, and study the electrode effects to its resistive switching by comparing the switching behaviors of O-doped Bi2S3 grown on different conductive substrate. It shows that the oxygen-doping in Bi2S3 via air annealing is an effective method to introduce traps to the interface between O-doped Bi2S3 and the conductive substrate of F-doped SnO2 or Pt, and produces the bipolar resistive switching. Moreover, by analyzing the I-V charac...
