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Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

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成果类型:
期刊论文
作者:
Pan, LX;Li, SS*;Liu, JL;Niu, ZC;Feng, SL;...
通讯作者:
Li, SS
作者机构:
[Li, SS] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Yiyang Teachers Coll, Dept Phys, Yiyang 413049, Peoples R China.
通讯机构:
[Li, SS] C
Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
语种:
英文
关键词:
quantum dot;quantum computing;decoherence
期刊:
SCIENCE IN CHINA SERIES A-MATHEMATICS
ISSN:
1006-9283
年:
2002
卷:
45
期:
5
页码:
666-670
基金类别:
This work was supported by the National Natural Science Foundation of China ( Grant Nos. 19974043 & 60025410).;
机构署名:
本校为其他机构
院系归属:
信息与电子工程学院
摘要:
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are u...
摘要(中文):
We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful...

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