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Photoconductive probing of the trap distribution in switchable interfaces

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成果类型:
期刊论文
作者:
Tian, Ye;Zhang, Jianming;Guo, Chuan Fei;Zhang, Baoshun*;Liu, Qian
通讯作者:
Zhang, Baoshun
作者机构:
[Zhang, Jianming; Tian, Ye; Zhang, Baoshun] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, Suzhou 212213, Peoples R China.
[Tian, Ye] Hunan City Univ, Sch Commun & Elect Engn, Yiyang 413000, Peoples R China.
[Liu, Qian; Tian, Ye] Natl Ctr Nanosci & Technol NCNST, Beijing 100190, Peoples R China.
[Zhang, Jianming] Suzhou HWN Nanotec Co LTD, Suzhou 212213, Peoples R China.
[Guo, Chuan Fei] Univ Houston, Dept Phys, Houston, TX 77204 USA.
通讯机构:
[Zhang, Baoshun] C
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, Suzhou 212213, Peoples R China.
语种:
英文
期刊:
Nanoscale
ISSN:
2040-3364
年:
2016
卷:
8
期:
2
页码:
915-920
基金类别:
NSFCNational Natural Science Foundation of China (NSFC) [10974037, 11547163]; CAS Strategy Pilot program [XAD 09020300]; Natural Science Foundation of Hunan provinceNatural Science Foundation of Hunan Province [2015JJ6015]; China Scholarship Council (CSC)China Scholarship Council [201508430266]
机构署名:
本校为其他机构
院系归属:
信息与电子工程学院
摘要:
Interfacial resistive switching features are highly dependent on the distribution of the carrier traps in the interface. However, the lack of probing seriously restricts ways of offering physical insights into its mechanism and improving interfacial resistors. In this work, we investigated a resistive switching interface that consists of Bi2S3 nano networks (BSNN) and F-doped SnO2 (FTO), uncovering the relationship between the decay of the photoconductance in BSNN and interfacial trap distribution. Based on this, we suggest a general method to probe the distribution of various interface traps....

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