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Increasing stability of MoS2 nanoribbons by edge engineering

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成果类型:
期刊论文
作者:
Jing, Huang
通讯作者:
Huang Jing
作者机构:
[Jing, Huang] Hunan City Univ, Dept Informat & Elect Engn, Yiyang 413000, Hunan, Peoples R China.
通讯机构:
[Huang Jing] D
Department of Information and Electronic Engineering, Hunan City University, Hunan 413000, China
语种:
英文
关键词:
Edge passivation;Electron density;Hybridization;Nanoribbons;Semiconductors;Stability
期刊:
Chemical Physics
ISSN:
0301-0104
年:
2021
卷:
548
页码:
111241
基金类别:
Educational reform project of the Education Department of Hunan Province (xiangjiaotong [2019] no. 291, no. 736).
机构署名:
本校为第一机构
摘要:
The effect of edge passivation with non-metallic atoms was evaluated on some structural and electronic properties of MoS2 nanoribbons. It was observed that at Na = 12 and above, the band gap is less oscillating and converges to 0.58 eV. By reducing the dimensionality, the band gap value changed dramatically. We found that d orbital of Mo atom greatly affects the density of states. All passivation processes were performed with H and X atoms, where X is a non-metallic atom. The hybridization of p and s orbitals of X and Mo atoms plays an important role in changing the electronic properties of AM...

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