期刊论文

Liu, Qian

英文

纳米研究：英文版

1998-0124

2017

10

6

1924-1931

10.1007/s12274-016-1376-3

National Key Research Program of China [2016YFA0200403]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [10974037, 11547163]; CAS Strategy Pilot program [XAD 09020300]; Hunan Provincial Natural Science Foundation of ChinaNatural Science Foundation of Hunan Province [2015JJ6015]; Science and technology project of Yiyang [2015JZ29]; China Scholarship Council (CSC)China Scholarship Council [201508430266]

本校为其他机构

In recent years, trap-related interfacial transport phenomena have received great attention owing to their potential applications in resistive switching devices and photo detectors. Not long ago, one new type of memristive interface that is composed of F-doped SnO_2 and Bi_2S_3 nano-network layers has demonstrated a bivariate-continuous-tunable resistance with a swift response comparable to the one in neuron synapses and with a brain-like memorizing capability. However, the resistive mechanism is still not clearly understood because of lack of evidence, and the limited improvement in the devel...

在最近的年里，陷井相关的界面的运输现象在抵抗切换的设备和相片察觉者由于他们的潜在的应用程序收到了大注意。不很久以前，由做 F 的 SnO 2 和双性人 2 S 3nano 网络层在神经原触处并且与一个像大脑的记住能力与比得上那的快速的回答表明了一个 bivariate-continuous-tunable 电阻。然而，因为证据，和有限改进的缺乏，抵抗机制仍然不清楚地在界面的设备的发展被理解。由联合 I-V 描述，电子精力损失光谱学，和第一原则的计算，我们详细用试验性、理论的方法学习了 memristive 接口的 macro/micro 特征，并且证实它的原子起源被归因于做 O 导致的陷井。这暗示做杂质的力量是为改进切换的特征...