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Exciton energy of the InAs/GaAs self-assembled quantum dot in a semiconductor microcavity

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成果类型:
期刊论文
作者:
Pan, LX*;Li, SS;Xia, JB
通讯作者:
Pan, LX
作者机构:
[Pan, LX] Yiyang Teachers Coll, Dept Phys, Yiyang 413049, Peoples R China.
Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
通讯机构:
[Pan, LX] Y
Yiyang Teachers Coll, Dept Phys, Yiyang 413049, Peoples R China.
语种:
英文
关键词:
quantum dot;microcavity
期刊:
中国物理B
ISSN:
1674-1056
年:
2001
卷:
10
期:
7
页码:
655-657
基金类别:
国家自然科学基金
机构署名:
本校为第一且通讯机构
院系归属:
信息与电子工程学院
摘要:
We report on the theoretical study of the interaction of the quantum dot (QD) exciton with the photon waveguide models in a semiconductor microcavity. The InAs/GaAs self-assembled QD exciton energies are calculated in a microcavity. The calculated results reveal that the electromagnetic field reduces the exciton energies in a semiconductor microcavity. The effect of the electromagnetic field decreases as the radius of the QD increases. Our calculated results are...

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